Nitride wide bandgap semiconductor material and electronic devices /

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for el...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser:
Hao, Yue, Zhang, Jinfeng, Zhang, Jincheng
Format:
Elektronisch E-Book
Sprache:
Englisch
Veröffentlicht:
Boca Raton : CRC Press, Taylor & Francis Group, [2017]
Ausgabe:
1st ed.
Zusammenfassung:
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Umfang:
1 online resource (389 pages) : illustrations, tables
Bibliografie:
Includes bibliographical references at the end of each chapters and index.
ISBN:
1-315-35183-8
1-5231-0840-1
1-315-36885-4
1-4987-4513-X
9781315368856
Schlagworte:
Nitrides.
Wide gap semiconductors > Design and construction.
Epitaxy.
Microelectronics > Materials.
Bezugswerke:
Links: