2010 22nd International Symposium on Power Semiconductor Devices and IC's

The blocking characteristics of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) were considerably improved by an oxygen (O2) annealing. This proposed annealing, which was performed before Schottky contact formation, successfully decreased the leakage current though the buffer region by about si...

Ausführliche Beschreibung

Gespeichert in:
1. Verfasser:
IEEE Staff (MitwirkendeR)
Körperschaft:
Institute of Electrical and Electronics Engineers (IEEE)
Format:
Elektronisch E-Book
Sprache:
Englisch
Veröffentlicht:
[Place of publication not identified] I E E E 2010
Zusammenfassung:
The blocking characteristics of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) were considerably improved by an oxygen (O2) annealing. This proposed annealing, which was performed before Schottky contact formation, successfully decreased the leakage current though the buffer region by about six orders of magnitude and had no effect on the current capability of the active region. The suppressed leakage current may be due to the improved surface condition induced by the reaction between oxygen and the AlGaN/GaN heterostructure. The proposed device employing the O2 annealing exhibited a suppressed leakage current and a high breakdown voltage of 1140 V without any surface passivation or edge termination structure.
Umfang:
1 online resource : illustrations
Anmerkungen:
Bibliographic Level Mode of Issuance: Monograph
Anmerkungen:
English
ISBN:
9784886860699
4886860699
Schlagworte:
Integrated circuits > Congresses.
Power semiconductors > Congresses.
Bezugswerke:
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