VLSI Technology, 1999

The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator.

Gespeichert in:
Körperschaft:
IEEE Press Staff
Format:
Elektronisch E-Book
Sprache:
Englisch
Veröffentlicht:
[Place of publication not identified] Business Center for Academic Societies Japan 1999
Zusammenfassung:
The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator.
Umfang:
1 online resource (192 pages)
Anmerkungen:
Bibliographic Level Mode of Issuance: Monograph
Anmerkungen:
English
Schlagworte:
Integrated circuits > Very large scale integration > Congresses.
Bezugswerke: