Digest. International Electron Devices Meeting, /

A simple technique for tuning the work function of molybenum(Mo)gate material over a wide range(4.5V-4.9V) is investigated. Ultra-low energy(<=3keV) Ar+ and N+ ion implantation is used to selectively induce structural and/or chemical cahnges in Mo gate films. These changes are shown to directly a...

Ausführliche Beschreibung

Gespeichert in:
Körperschaft:
Institute of Electrical and Electronics Engineers
Format:
Elektronisch E-Book
Sprache:
Englisch
Veröffentlicht:
Piscataway, N.J. : IEEE, 2002.
Zusammenfassung:
A simple technique for tuning the work function of molybenum(Mo)gate material over a wide range(4.5V-4.9V) is investigated. Ultra-low energy(<=3keV) Ar+ and N+ ion implantation is used to selectively induce structural and/or chemical cahnges in Mo gate films. These changes are shown to directly affect the Mo gate work function, so that it can be adjusted by adjusting the implant parameters and annealing conditions. The mechanism behind this pheonmenon is investigated using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). The applicability of this technique for threshold voltage (Vth) control, particularly in fully-depleted SOI CMOS devices, is demonstrated with Mo gate ultra-thin body (UTB) SOI MOSFETs and double-gate FinFETs.
Umfang:
1 online resource
Schlagworte:
Electronic apparatus and appliances > Congresses.
Solid state electronics > Congresses.
Bezugswerke: